Layout-Dependent Strain Optimization for p-Channel Trigate Transistors
نویسندگان
چکیده
منابع مشابه
InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design
InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs) due to its high bulk hole mobility that can be further enhanced with the use of strain. We fabricate and study InxGa1 xSb-channel pMOSFETs with atomic layer deposition Al2O3 dielectric and self-aligned source/drain formed by ion implantation. The effects of strain and...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2012
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2011.2171968